Patent #: CN110734758B / US11898072B2 / WO2021082096A1

Inventor: Liang Li, Qinggang Zhang

Highlights

• This patent introduces high-temperature confined growth: semiconductor nanocrystal precursors are loaded into micro/mesoporous materials and calcined to form nanocrystals inside the inorganic host.
• The approach uses pore collapse to encapsulate nanocrystals, improving resistance to moisture, oxygen, and light for LED and backlight applications.

Summary

This invention protects a preparation route that changes the logic of nanocrystal stabilization. Instead of synthesizing fragile nanocrystals first and then coating them later, the method grows semiconductor nanocrystals directly inside micro- or mesoporous inorganic materials. During high-temperature treatment, the porous host confines crystal growth and can collapse around the nanocrystals, producing a dense protective environment. The result is a semiconductor nanocrystalline fluorescent material with improved operational stability. This patent captures a central milestone in Professor Li’s work: using ceramic-like confined synthesis to make perovskite and other nanocrystal emitters more durable for real device conditions.

Patent citation: L. Li and Q. Zhang, “Preparation method of semiconductor nanocrystalline fluorescent material and semiconductor nanocrystalline fluorescent material prepared thereby and application thereof,” International Patent Application WO2021082096A1.