Summary
This work advances Professor Li’s self-passivation idea by making oxide growth faster and more controllable. Instead of waiting for slow spontaneous oxidation, the researchers used peroxide treatment to oxidize self-metal sources such as cadmium and aluminium on the quantum-dot surface. This produced protective CdO or Al2O3/CdO hybrid oxide layers that greatly improved photostability. The key novelty is the use of the quantum dot itself as a sacrificial metal source for oxide protection. This provides a practical route to form robust inorganic barriers on individual nanocrystals, linking early self-passivation chemistry to later oxide-encapsulation and ceramic-stability strategies.
Citation: L. Huang et al., “Sacrificial oxidation of a self-metal source for the rapid growth of metal oxides on quantum dots towards improving photostability,” Chemical Science, vol. 10, pp. 6683–6688, 2019, doi: 10.1039/C9SC01233H.