Patent #: CN107541203B / US10696900B2 / WO2018000704A1

Inventor: Liang Li, Zhichun Li, Shouqiang Huang

Highlights

• The patent protects quantum dots coated with metal oxide/silica dual barriers, such as alumina/silica, zirconia/silica, titania/silica, or zinc oxide/silica.
• The dual coating is designed to reduce penetration of water and oxygen, improving photostability compared with unprotected quantum dots.

Summary

This invention addresses one of the earliest practical barriers for quantum-dot applications: the vulnerability of nanocrystal surfaces to water, oxygen, and photo-oxidation. The patented strategy uses a metal oxide/silica coating or encapsulation structure to create a stronger protective barrier around quantum dots. The dual-material design is important because silica provides an inorganic shell, while the added metal oxide improves barrier quality and stability. The patent is closely connected to Professor Li’s oxide-encapsulation research and represents a key transition from self-passivation toward engineered inorganic protection layers for fragile luminescent nanomaterials.

Patent citation: L. Li, Z. Li, and S. Huang, “Metal oxide/silica coated quantum dot and preparation method thereof,” International Patent Application WO2018000704A1.