Semiconductor Composite Luminescent Material, Preparation Method and Light-Emitting Device

Patent #: CN114163997B

Inventor: Liang Li, Weilin Zheng, Mengda He, Long Kong

Highlights

  • This patent protects a semiconductor-oxide heterojunction luminescent material that forms a Type-II energy-level structure.
  • By adjusting the oxide type and content, the invention enables wavelength-tunable and spectrally stable emission for light-emitting devices.

Summary

This invention focuses on optical control as well as stability. The semiconductor fluorescent material and oxide are designed to form a heterojunction, producing a Type-II energy-level structure that can tune emission properties. This gives the material a route to stable and controllable luminescence, which is particularly important for display and lighting devices where color precision matters. The patent complements Professor Li’s broader stabilization work by adding band-structure engineering to the toolkit. It is not only about protecting the nanocrystal, but also about shaping how the protected material emits light.

Patent citation: L. Li, W. Zheng, M. He, and L. Kong, “Semiconductor composite luminescent material, preparation method and light-emitting device,” China Patent CN114163997B.

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